Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs, 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.
The IGT1112M90 operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy sealed ceramic lid.
Additional features include:
- GaN on SiC HEMT Technology
- Output Power >90 W
- Fully matched to 50 W Impedance at both Input and Output
- High Efficiency - up to 43%
- 100% RF Tested
- RoHS and REACH Compliant
For additional specifications and operating parameters, download the datasheet.