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1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025

Qorvo offers the QPD1025 discrete GaN on SiC RF transistor that is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz.

The input matched HEMT is in an industry standard air cavity package and can support both CW and pulsed operations. All Qorvo devices are lead-free and ROHS compliant.

Additional features include:

  • Frequency range: 1.0 to 1.1 GHz
  • Linear gain: 22.5 dB typical at 1 GHz load pull
  • Typical PAE3dB: 77.2% at 1 GHz
  • Operating voltage: 65 V
  • Available evaluation boards

Download the datasheet for more information on QPD1025 transistor.